Undergraduate Course: Electronic Circuits and Devices 2 (ELEE08011)
Course Outline
| School |
School of Engineering |
College |
College of Science and Engineering |
| Course type |
Standard |
Availability |
Available to all students |
| Credit level (Normal year taken) |
SCQF Level 08 (Year 2 Undergraduate) |
Credits |
10 |
| Home subject area |
Electronics |
Other subject area |
None |
| Course website |
None |
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| Course description |
The objective here is to introduce the concepts underlying device operation and fabrication, without covering the detailed physics.
Students will gain an appreciation of the basic semiconductor properties relevant to device operation and fabrication, and an understanding of the operation of the pn junction diode and transistors, together with their properties, such as /I-V/ characteristics. An introduction to circuits using transistors will also be provided, explaining how to bias a transistor for linear operation. Small signal models to explain transistor behaviour will also be described. |
Course Delivery Information
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| Delivery period: 2010/11 Semester 1, Available to all students (SV1)
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WebCT enabled: Yes |
Quota: None |
| Location |
Activity |
Description |
Weeks |
Monday |
Tuesday |
Wednesday |
Thursday |
Friday |
| King's Buildings | Lecture | | 1-11 | | | | 12:10 - 13:00 | | | King's Buildings | Lecture | | 1-11 | 12:10 - 13:00 | | | | |
| First Class |
Week 1, Monday, 12:10 - 13:00, Zone: King's Buildings. Lecture Theatre 100, Joseph Black Building |
Summary of Intended Learning Outcomes
1. Explain the origin of electron energy bands in solids and how they affect the electrical properties of solids.
2. Describe the difference between intrinsic and extrinsic semiconductors and how the electrical properties of the latter are affected by doping.
3. Explain what is meant by recombination, electron-hole pair generation, carrier lifetime, intrinsic carrier concentration, degenerate semiconductors, drift velocity and diffusion length.
4. Describe the fabrication, structure, principles of operation and key properties (such as /I-V/ characteristics) of devices such as the p-n junction diode and MOS transistor.
5. Describe how a transistor can be biased in the active region, as a linear amplifier, analyse the d.c. performance of a single transistor stage and explain how the operating point can be stabilised.
6. Explain how transistor small signal performance can be represented by the h-parameter equivalent circuit or the hybrid-pi model and show how parameter values can be obtained from information in data sheets and d.c. quiescent current.
7. Perform simple calculations, given appropriate formulae, to determine a range of material properties (such as conductivity, resistivity, doping concentrations, carrier mobilities) and device properties (such as static and dynamic resistance, junction capacitance and drain current). |
Assessment Information
One Ninety Minute Written Exam - Worth 100% of Final Mark.
|
| Please see Visiting Student Prospectus website for Visiting Student Assessment information |
Special Arrangements
| Not entered |
Contacts
| Course organiser |
Dr Peter Ewen
Tel: (0131 6)50 5651
Email: Peter.Ewen@ed.ac.uk |
Course secretary |
Mrs Sharon Potter
Tel: (0131 6)50 5687
Email: Sharon.Potter@ed.ac.uk |
|
copyright 2010 The University of Edinburgh -
1 September 2010 5:58 am
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