Undergraduate Course: Microelectronics 2 (ELEE08020)
Course Outline
| School | School of Engineering |
College | College of Science and Engineering |
| Course type | Standard |
Availability | Available to all students |
| Credit level (Normal year taken) | SCQF Level 8 (Year 2 Undergraduate) |
Credits | 10 |
| Home subject area | Electronics |
Other subject area | None |
| Course website |
None |
Taught in Gaelic? | No |
| Course description | The objective of the course is to introduce the concepts underlying device operation and fabrication. Students will gain an appreciation of the basic semiconductor properties relevant to device operation and fabrication, and an understanding of the operation of the pn junction diode and transistors, together with their properties, such as I-V characteristics. |
Entry Requirements (not applicable to Visiting Students)
| Pre-requisites |
|
Co-requisites | |
| Prohibited Combinations | |
Other requirements | None |
| Additional Costs | None |
Information for Visiting Students
| Pre-requisites | None |
| Displayed in Visiting Students Prospectus? | No |
Course Delivery Information
|
| Delivery period: 2013/14 Semester 1, Available to all students (SV1)
|
Learn enabled: Yes |
Quota: None |
Web Timetable |
Web Timetable |
| Course Start Date |
16/09/2013 |
| Breakdown of Learning and Teaching activities (Further Info) |
Total Hours:
100
(
Lecture Hours 20,
Seminar/Tutorial Hours 18,
Programme Level Learning and Teaching Hours 2,
Directed Learning and Independent Learning Hours
60 )
|
| Additional Notes |
|
| Breakdown of Assessment Methods (Further Info) |
Written Exam
100 %,
Coursework
0 %,
Practical Exam
0 %
|
| Exam Information |
| Exam Diet |
Paper Name |
Hours:Minutes |
|
|
| Main Exam Diet S1 (December) | | 1:30 | | | | Resit Exam Diet (August) | | 1:30 | | |
Summary of Intended Learning Outcomes
At the end of the course students should be able to:
1. Explain the origin of electron energy bands in solids and how they affect the electrical properties of solids.
2. Describe the difference between intrinsic and extrinsic semiconductors and how the electrical properties of the latter are affected by doping.
3. Describe and explain how the resistivity or conductivity of metals and semiconductors are affected by temperature.
4. Explain what is meant by recombination, electron-hole pair generation, carrier lifetime, intrinsic carrier concentration, mobility, scattering, degenerate semiconductors, drift velocity, diffusion current, diffusion length and Fermi level.
5. Describe the fabrication, structure, principles of operation and key properties (such as I-V characteristics) of devices such as the p-n junction diode and MOS transistor.
6. Perform simple calculations, given appropriate formulae, to determine a range of material properties (such as conductivity, resistivity, doping concentrations, carrier mobilities) and device properties (such as static and dynamic resistance, junction capacitance and drain current). |
Assessment Information
| One 2 hour written exam worth 100% of final mark |
Special Arrangements
| None |
Additional Information
| Academic description |
Not entered |
| Syllabus |
Part 1: Semiconductor theory
Part 2: IC fabrication and the pn junction diode
Part 3: Transistors |
| Transferable skills |
Not entered |
| Reading list |
Not entered |
| Study Abroad |
Not entered |
| Study Pattern |
Not entered |
| Keywords | Semiconductor, devices, fabrication, transistors |
Contacts
| Course organiser | Dr Les Haworth
Tel: (0131 6)50 5624
Email: Les.Haworth@ed.ac.uk |
Course secretary | Miss Lucy Davie
Tel: (0131 6)50 5687
Email: Lucy.Davie@ed.ac.uk |
|
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