Undergraduate Course: Microelectronics 3 (ELEE09021)
Course Outline
| School | School of Engineering |
College | College of Science and Engineering |
| Credit level (Normal year taken) | SCQF Level 9 (Year 3 Undergraduate) |
Availability | Available to all students |
| SCQF Credits | 10 |
ECTS Credits | 5 |
| Summary | The objective of this module is to give students an in-depth analysis of semiconductor devices, focussing on the MOS transistor, fabrication technology and simple MOS circuits. A computer simulation exercise that backs up this course will be run. |
| Course description |
20 lectures, 8 examples classes, 4 tutorials and 6-hour laboratory
|
Information for Visiting Students
| Pre-requisites | Prior knowledge of basic semiconductor theory and operation principles of semiconductor devices is required and recommended. |
Course Delivery Information
|
| Academic year 2014/15, Available to all students (SV1)
|
Quota: None |
| Course Start |
Semester 1 |
| Course Start Date |
15/09/2014 |
Timetable |
Timetable |
| Learning and Teaching activities (Further Info) |
Total Hours:
100
(
Lecture Hours 22,
Seminar/Tutorial Hours 22,
Formative Assessment Hours 1,
Summative Assessment Hours 3.5,
Programme Level Learning and Teaching Hours 2,
Directed Learning and Independent Learning Hours
49 )
|
| Assessment (Further Info) |
Written Exam
85 %,
Coursework
15 %,
Practical Exam
0 %
|
| Additional Information (Assessment) |
85% exam - 120 minute written examination
15% course work - computer simulation exercise |
| Feedback |
Not entered |
| Exam Information |
| Exam Diet |
Paper Name |
Hours & Minutes |
|
| Main Exam Diet S1 (December) | | 2:00 | |
Learning Outcomes
1. Understand the theory of p-n junction and MOSFET operation.
2. Describe the characteristics of a CMOS inverter - static and transient response.
3. Know the parameters that limit the switching speed of CMOS inverters.
4. Describe the operation principles of a MOS capacitor.
5. Reproduce the device characteristics and know the function of contemporary semiconductor devices.
6. Follow the fabrication process sequence for MOS capacitors and transistors.
7. Design and optimise simple MOS circuits. Understand and appreciate how, and to what extent, device physics, fabrication process and circuit design affect circuit performance.
|
Additional Information
| Graduate Attributes and Skills |
Not entered |
| Special Arrangements |
None |
| Keywords | Semiconductor devices, MOS transistor, IC fabrication |
Contacts
| Course organiser | Dr Rebecca Cheung
Tel: (0131 6)50 5749
Email: R.Cheung@ed.ac.uk |
Course secretary | Mrs Lynn Hughieson
Tel: (0131 6)50 5687
Email: Lynn.Hughieson@ed.ac.uk |
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© Copyright 2014 The University of Edinburgh - 12 January 2015 3:56 am
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