Undergraduate Course: Microelectronics 2 (ELEE08020)
Course Outline
School | School of Engineering |
College | College of Science and Engineering |
Course type | Standard |
Availability | Available to all students |
Credit level (Normal year taken) | SCQF Level 8 (Year 2 Undergraduate) |
Credits | 10 |
Home subject area | Electronics |
Other subject area | None |
Course website |
None |
Taught in Gaelic? | No |
Course description | The objective of the course is to introduce the concepts underlying device operation and fabrication. Students will gain an appreciation of the basic semiconductor properties relevant to device operation and fabrication, and an understanding of the operation of the pn junction diode and transistors, together with their properties, such as I-V characteristics. |
Entry Requirements (not applicable to Visiting Students)
Pre-requisites |
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Co-requisites | |
Prohibited Combinations | |
Other requirements | None |
Additional Costs | None |
Information for Visiting Students
Pre-requisites | None |
Displayed in Visiting Students Prospectus? | No |
Course Delivery Information
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Delivery period: 2014/15 Semester 1, Available to all students (SV1)
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Learn enabled: Yes |
Quota: None |
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Web Timetable |
Web Timetable |
Course Start Date |
15/09/2014 |
Breakdown of Learning and Teaching activities (Further Info) |
Total Hours:
100
(
Lecture Hours 20,
Seminar/Tutorial Hours 18,
Programme Level Learning and Teaching Hours 2,
Directed Learning and Independent Learning Hours
60 )
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Additional Notes |
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Breakdown of Assessment Methods (Further Info) |
Written Exam
100 %,
Coursework
0 %,
Practical Exam
0 %
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Exam Information |
Exam Diet |
Paper Name |
Hours & Minutes |
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Main Exam Diet S1 (December) | | 1:30 | | Resit Exam Diet (August) | | 1:30 | |
Summary of Intended Learning Outcomes
At the end of the course students should be able to:
1. Explain the origin of electron energy bands in solids and how they affect the electrical properties of solids.
2. Describe the difference between intrinsic and extrinsic semiconductors and how the electrical properties of the latter are affected by doping, sketch the energy band diagrams and describe the properties of both direct and indirect band gap semiconductors.
3. Describe and explain how the resistivity or conductivity of metals and semiconductors are affected by temperature.
4. Explain what is meant by recombination, electron-hole pair generation, carrier lifetime, intrinsic carrier concentration, mobility, scattering, degenerate semiconductors, drift velocity, diffusion current, diffusion length and Fermi level.
5. Describe the fabrication, structure, principles of operation and key properties (such as I-V characteristics) of devices including the p-n junction diode, the photo-diode, the laser diode, the Schottky diode, the MOS transistor, and the bipolar junction transistor (BJT).
6. Sketch energy band diagrams for all the devices in 5 above in equilibrium and under different bias conditions appropriate to the device. For the MOS transistor relate charge distributions in the device to the energy band diagrams.
7. Describe the main breakdown mechanisms for the devices in 5 above, and also the effect of channel/base width modulation.
8. Describe a simple model for heat flow in semiconductor devices, and perform simple calculations to determine temperature and maximum permissible power dissipation given appropriate formulae and data.
9. Perform simple calculations, given appropriate formulae, to determine a range of material properties (such as conductivity, resistivity, doping concentrations, carrier mobilities) and device properties (such as static and dynamic resistance, junction capacitance and drain current). |
Assessment Information
One 2 hour written exam worth 100% of final mark |
Special Arrangements
None |
Additional Information
Academic description |
Not entered |
Syllabus |
Part 1: Semiconductor theory
Part 2: IC fabrication and the pn junction diode
Part 3: Transistors |
Transferable skills |
Not entered |
Reading list |
Semiconductor Devices, Physics and Technology
Simon Sze, Ming-Kwei Lee
3rd Edition, International Student Version
Wiley (2013)
ISBN: 978-0-470-87367-0
Electronic Devices and Circuits
Theodore F. Bogart, Jeffrey S. Beasley & Guillermo Rico
6th Edition
Prentice Hall (2003)
ISBN: 978-0-131-11142-4
Microelectronic Devices
Keith Leaver
2nd Edition
Imperial College Press (1997)
ISBN: 978-1-86094-020-0 / 978-1-86094-013-2
Principles of Analog Electronics
Giovanni Saggio
1st Edition
CRC Press (2014)
ISBN: 978-1-4665-8201-9
The Solid State
H.M. Rosenberg
3rd Edition
Oxford University Press (1992)
ISBN: 0-19-851870-6
Introduction to Solid State Physics
Charles Kittel
8th Edition
Wiley (2005)
ISBN: 0-471-41526-X
Introduction to the Physics of Electrons in Solids
Brian K. Tanner
Cambridge University Press (1996)
ISBN: 0-521-23941-9 / 0-521-28358-2
Britney Spears Guide to Semiconductor Physics
http://britneyspears.ac/lasers.htm |
Study Abroad |
Not entered |
Study Pattern |
Not entered |
Keywords | Semiconductor, devices, fabrication, transistors |
Contacts
Course organiser | Dr Les Haworth
Tel: (0131 6)50 5624
Email: Les.Haworth@ed.ac.uk |
Course secretary | Miss Lucy Davie
Tel: (0131 6)50 5687
Email: Lucy.Davie@ed.ac.uk |
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© Copyright 2014 The University of Edinburgh - 29 August 2014 3:57 am
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