Undergraduate Course: Microelectronics 3 (ELEE09021)
Course Outline
| School | School of Engineering |
College | College of Science and Engineering |
| Credit level (Normal year taken) | SCQF Level 9 (Year 3 Undergraduate) |
Availability | Available to all students |
| SCQF Credits | 10 |
ECTS Credits | 5 |
| Summary | The objective of the course is to provide students with an in-depth understanding of semiconductor device operation as well as the fabrication techniques used in their manufacture. The course will cover the basics of semiconductor physics, the important building blocks of the p-n junction and MOS capacitor, and the operation and fabrication of MOS and bipolar transistors. Students will also be introduced to the structure of the electronics industry and important developments that are driving future technologies. |
| Course description |
20 lectures, 8 examples classes, 4 tutorials and 6-hour laboratory.
Lectures will look at: (A) Semiconductor theory; (B) Field Effect Devices; (C) Junction Devices; (D) Microfabrication and Process Integration; and (E) Future Trends in the Electronics Industry. Laboratory exercises will introduce the student to Process and Device Simulation.
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Information for Visiting Students
| Pre-requisites | Prior knowledge of basic semiconductor theory and operation principles of semiconductor devices is required and recommended. |
| High Demand Course? |
Yes |
Course Delivery Information
|
| Academic year 2016/17, Available to all students (SV1)
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Quota: None |
| Course Start |
Semester 1 |
| Course Start Date |
19/09/2016 |
Timetable |
Timetable |
| Learning and Teaching activities (Further Info) |
Total Hours:
100
(
Lecture Hours 22,
Seminar/Tutorial Hours 22,
Formative Assessment Hours 1,
Summative Assessment Hours 3.5,
Programme Level Learning and Teaching Hours 2,
Directed Learning and Independent Learning Hours
49 )
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| Assessment (Further Info) |
Written Exam
85 %,
Coursework
15 %,
Practical Exam
0 %
|
| Additional Information (Assessment) |
85% exam - 120 minute written examination
15% course work - computer simulation exercise |
| Feedback |
Not entered |
| Exam Information |
| Exam Diet |
Paper Name |
Hours & Minutes |
|
| Main Exam Diet S1 (December) | | 2:00 | |
Learning Outcomes
1. Understand the theory of p-n junction and MOSFET operation.
2. Describe the characteristics of a CMOS inverter - static and transient response.
3. Know the parameters that limit the switching speed of CMOS inverters.
4. Describe the operation principles of a MOS capacitor.
5. Reproduce the device characteristics and know the function of contemporary semiconductor devices.
6. Follow the fabrication process sequence for MOS capacitors and transistors.
7. Design and optimise simple MOS circuits. Understand and appreciate how, and to what extent, device physics, fabrication process and circuit design affect circuit performance.
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Reading List
READING LIST - RECOMMENDED
Semiconductor Devices, Physics and Technology
Simon Sze, Ming-Kwei Lee
3rd Edition, International Student Version
Wiley (2013)
ISBN: 978-0-470-87367-0
READING LIST - BACKGROUND
Introduction to Microfabrication
Sami Franssila
2nd Edition
Wiley (2010)
ISBN: 978-0-470-74983-8
Introduction to Solid State Physics
Charles Kittel
8th Edition
Wiley (2005)
ISBN: 0-471-41526-X
Microelectronic Devices
Keith Leaver
2nd Edition
Imperial College Press (1997)
ISBN: 978-1-86094-020-0 / 978-1-86094-013-2
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Additional Information
| Graduate Attributes and Skills |
Not entered |
| Special Arrangements |
None |
| Keywords | Semiconductor devices,MOS transistor,IC fabrication |
Contacts
| Course organiser | Dr Jonathan Terry
Tel:
Email: Jon.Terry@ed.ac.uk |
Course secretary | Mrs Lynn Hughieson
Tel: (0131 6)50 5687
Email: Lynn.Hughieson@ed.ac.uk |
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