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DEGREE REGULATIONS & PROGRAMMES OF STUDY 2010/2011
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DRPS : Course Catalogue : School of Engineering : Electronics

Undergraduate Course: Electronic Circuits and Devices 2 (ELEE08011)

Course Outline
School School of Engineering College College of Science and Engineering
Course type Standard Availability Available to all students
Credit level (Normal year taken) SCQF Level 8 (Year 2 Undergraduate) Credits 10
Home subject area Electronics Other subject area None
Course website None Taught in Gaelic? No
Course description The objective here is to introduce the concepts underlying device operation and fabrication, without covering the detailed physics.
Students will gain an appreciation of the basic semiconductor properties relevant to device operation and fabrication, and an understanding of the operation of the pn junction diode and transistors, together with their properties, such as /I-V/ characteristics. An introduction to circuits using transistors will also be provided, explaining how to bias a transistor for linear operation. Small signal models to explain transistor behaviour will also be described.
Entry Requirements
Pre-requisites Students MUST have passed: Mathematical Methods 2 (MATH08032) OR Electrical Engineering 1 (ELEE08001) OR Engineering 1 (SCEE08001)
Co-requisites Students MUST also take: Electronics 2 (ELEE08010)
Prohibited Combinations Other requirements None
Additional Costs None
Information for Visiting Students
Pre-requisites None
Displayed in Visiting Students Prospectus? Yes
Course Delivery Information
Delivery period: 2010/11 Semester 1, Available to all students (SV1) WebCT enabled:  Yes Quota:  None
Location Activity Description Weeks Monday Tuesday Wednesday Thursday Friday
King's BuildingsLecture1-11 12:10 - 13:00
King's BuildingsLecture1-11 12:10 - 13:00
First Class Week 1, Monday, 12:10 - 13:00, Zone: King's Buildings. Lecture Theatre 100, Joseph Black Building
Exam Information
Exam Diet Paper Name Hours:Minutes Stationery Requirements Comments
Main Exam Diet S1 (December)Electronic Circuits and Devices 21:303 x 8 sides
Resit Exam Diet (August)1:303 x 8 sides
Summary of Intended Learning Outcomes
1. Explain the origin of electron energy bands in solids and how they affect the electrical properties of solids.
2. Describe the difference between intrinsic and extrinsic semiconductors and how the electrical properties of the latter are affected by doping.
3. Explain what is meant by recombination, electron-hole pair generation, carrier lifetime, intrinsic carrier concentration, degenerate semiconductors, drift velocity and diffusion length.
4. Describe the fabrication, structure, principles of operation and key properties (such as /I-V/ characteristics) of devices such as the p-n junction diode and MOS transistor.
5. Describe how a transistor can be biased in the active region, as a linear amplifier, analyse the d.c. performance of a single transistor stage and explain how the operating point can be stabilised.
6. Explain how transistor small signal performance can be represented by the h-parameter equivalent circuit or the hybrid-pi model and show how parameter values can be obtained from information in data sheets and d.c. quiescent current.
7. Perform simple calculations, given appropriate formulae, to determine a range of material properties (such as conductivity, resistivity, doping concentrations, carrier mobilities) and device properties (such as static and dynamic resistance, junction capacitance and drain current).
Assessment Information
One Ninety Minute Written Exam - Worth 100% of Final Mark.
Special Arrangements
None
Additional Information
Academic description Not entered
Syllabus Not entered
Transferable skills Not entered
Reading list Not entered
Study Abroad Not entered
Study Pattern Not entered
Keywords Not entered
Contacts
Course organiser Dr Peter Ewen
Tel: (0131 6)50 5651
Email: Peter.Ewen@ed.ac.uk
Course secretary Mrs Sharon Potter
Tel: (0131 6)51 7079
Email: Sharon.Potter@ed.ac.uk
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copyright 2011 The University of Edinburgh - 31 January 2011 7:41 am