Undergraduate Course: Microelectronics 3 (ELEE09021)
Course Outline
| School | School of Engineering |
College | College of Science and Engineering |
| Course type | Standard |
Availability | Available to all students |
| Credit level (Normal year taken) | SCQF Level 9 (Year 3 Undergraduate) |
Credits | 10 |
| Home subject area | Electronics |
Other subject area | None |
| Course website |
None |
Taught in Gaelic? | No |
| Course description | The objective of this module is to give students an in-depth analysis of semiconductor devices, focussing on the MOS transistor, fabrication technology and simple MOS circuits. A computer simulation exercise that backs up this course will be run. |
Information for Visiting Students
| Pre-requisites | Prior knowledge of basic semiconductor theory and operation principles of semiconductor devices is required and recommended. |
| Displayed in Visiting Students Prospectus? | No |
Course Delivery Information
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| Delivery period: 2014/15 Semester 1, Available to all students (SV1)
|
Learn enabled: Yes |
Quota: None |
|
Web Timetable |
Web Timetable |
| Course Start Date |
15/09/2014 |
| Breakdown of Learning and Teaching activities (Further Info) |
Total Hours:
100
(
Lecture Hours 22,
Seminar/Tutorial Hours 22,
Summative Assessment Hours 1.5,
Programme Level Learning and Teaching Hours 2,
Directed Learning and Independent Learning Hours
52 )
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| Additional Notes |
|
| Breakdown of Assessment Methods (Further Info) |
Written Exam
85 %,
Coursework
15 %,
Practical Exam
0 %
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| Exam Information |
| Exam Diet |
Paper Name |
Hours & Minutes |
|
| Main Exam Diet S1 (December) | | 2:00 | |
Summary of Intended Learning Outcomes
1. Understand the theory of p-n junction and MOSFET operation.
2. Describe the characteristics of a CMOS inverter - static and transient response.
3. Know the parameters that limit the switching speed of CMOS inverters.
4. Describe the operation principles of a MOS capacitor.
5. Reproduce the device characteristics and know the function of contemporary semiconductor devices.
6. Follow the fabrication process sequence for MOS capacitors and transistors.
7. Design and optimise simple MOS circuits. Understand and appreciate how, and to what extent, device physics, fabrication process and circuit design affect circuit performance. |
Assessment Information
85% exam - 120 minute written examination
15% course work - computer simulation exercise |
Special Arrangements
| None |
Additional Information
| Academic description |
Not entered |
| Syllabus |
20 lectures, 8 examples classes, 4 tutorials and 6-hour laboratory |
| Transferable skills |
Not entered |
| Reading list |
Not entered |
| Study Abroad |
Not entered |
| Study Pattern |
Not entered |
| Keywords | Semiconductor devices, MOS transistor, IC fabrication |
Contacts
| Course organiser | Dr Rebecca Cheung
Tel: (0131 6)50 5749
Email: R.Cheung@ed.ac.uk |
Course secretary | Mrs Lynn Hughieson
Tel: (0131 6)50 5687
Email: Lynn.Hughieson@ed.ac.uk |
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